Some rumors have already been circulating on the internet that the Samsung Galaxy S8 could feature 8 GB of RAM – Random Access Memory. We also did a story on that, but it was all based on rumors only, but now as of January 10, the giant memory manufacturer name SK Hynix has introduced its new 8 GB “LPDDR4” RAM. If the earlier news of “Samsung featuring 8 GB RAM” and “8 GB introduction by Hynix” news has come connection, then we can say that there are very high chances of SK Hynix 8 GB DDR4X chip to power upcoming Samsung Galaxy S8.
SK Hynix 8 GB DDR4X Chip To Power Upcoming Samsung Galaxy S8
The Korean news blog, The Investor states that this chip may be made for both Samsung and Apple’s flagship. The chip is expected to feature in Galaxy S8 and Galaxy S8 Edge which is releasing during the MWC – Mobile World Congress show. Samsung will release few units and then fully released on 18th of April 2017.
Related Story: Samsung Galaxy S8 Release Schedule On 18th Of April
Coming back to 8 GB RAM specification, SK Hynix is the second largest chip maker in South Korea. The company has announced the mobile DRAM chip, which is probably going to feature in forthcoming Samsung Galaxy S8.
In a statement, the head of the firm Oh Jong-hoon said, “The new chip will help the users to maximize their mobile experience.”
The new chip will feature in Galaxy S8 will take 30 percent less space than it predecessor, along with new Qualcomm Snap Dragon 835 which is also smaller in size. The system on chip is coupled with Adreno 540 GPU – Graphic Processing Unit.
The upcoming Galaxy S8 is going to be powerful in performance if all these specs are 100 percent coming into it.